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Same model may have multiple batches, images only for reference.
GBJ35M Won-Top Electronics
Same model may have multiple batches, images only for reference.

GBJ35M

Part No GBJ35M
Manufacturer GeneSiC Semiconductor
Catalog Bridge Rectifiers
Description 1000V 35A GBJ SINGLE PHASE BRIDG
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Bridge Rectifiers
Mfr GeneSiC Semiconductor
Package Bulk
Product Status Active
Diode Type Single Phase
Technology Standard
Voltage - Peak Reverse (Max) 1 kV
Current - Average Rectified (Io) 35 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr 10 µA @ 1000 V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case 4-SIP, GBJ
Supplier Device Package GBJ
Base Product Number GBJ35
Standard Package 200 pcs
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 594236-GBJ35M
Ultra Librarian 3D Model Ultra Librarian GBJ35M CAD Model

Description

The 594236-GBJ35M is a bridge rectifier diode designed for use in discrete semiconductor products. It is a single-phase diode with an average rectified current (Io) of 35A. Manufactured by GeneSiC Semiconductor, the 594236-GBJ35M is an active product in the market.

  • Average Rectified Current (Io): 35A
  • Forward Voltage (Vf) @ Current (If): 1.1V @ 17.5A
  • Current Leakage @ Reverse Voltage (Vr): 10 μA @ 1000V
  • Maximum Peak Reverse Voltage: 1kV
  • Operating Temperature: -55°C to 150°C
  • Package: 4-SIP, GBJ
  • Mounting Type: Through-hole

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Availability: 9,800 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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