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GB01SLT06-214

Part No GB01SLT06-214
Manufacturer GeneSiC Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 650V 1A DO214AA / Diode 650 V 1A Surface Mount DO-214AA
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr GeneSiC Semiconductor
Series SiC Schottky MPS™
Package Tape & Reel
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 2 V @ 1 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 10 µA @ 6.5 V
Capacitance @ Vr, F 76pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Supplier Device Package DO-214AA
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number GB01SLT06
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
California Prop 65 Warning Information
Win Source Part Number 1337755-GB01SLT06-214
Ultra Librarian 3D Model Ultra Librarian GB01SLT06-214 CAD Model

Description

The GB01SLT06-214 is a SiC Schottky MPS™ diode from GeneSiC Semiconductor. The manufacturer is GeneSiC Semiconductor, and the product is GB01SLT06-214.

  • Maximum Reverse Voltage: 650V
  • Average Rectified Current: 1A
  • Reverse Recovery Time: 0ns
  • Reverse Leakage Current: 10µA @ 6.5V
  • Capacitance: 76pF @ 1V and 1MHz
  • Temperature Range: -55°C to 175°C
  • Package: DO-214AA, SMB
  • Mounting: Surface Mount

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