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Same model may have multiple batches, images only for reference.
G3R350MT12J GeneSiC Semiconductor
Same model may have multiple batches, images only for reference.

G3R350MT12J

Part No G3R350MT12J
Manufacturer GeneSiC Semiconductor
Catalog FETs - Single
Description SIC MOSFET N-CH 11A TO263-7
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202801-G3R350MT12J
Manufacturer GeneSiC Semiconductor
Category Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series G3R™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Ultra Librarian 3D Model Ultra Librarian G3R350MT12J CAD Model

Description

The GeneSiC Semiconductor G3R™ N-Channel SiCFET (Silicon Carbide) MOSFET is a high-performance discrete semiconductor product.

  • Channel Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain-to-Source Voltage: 1200V
  • Operating Temperature Range: -55°C to 175°C
  • Package: Tube
  • Category: Transistors-FETs, MOSFETs
  • Product Status: Active

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