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2N5305

Part No 2N5305
Manufacturer GE Solid State
Catalog Hard To Find
Description SILICON DARLINGTON TRANSISTORS
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Manufacturer GE Solid State
Win Source Part Number 1123948-2N5305
Manufacturer Homepage 0
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2N5305 CAD Model

Description

The 2N5305 is a silicon NPN power transistor. It was originally manufactured by GE Solid State, but is now available from various manufacturers as a replacement part. This transistor is designed for use in general purpose amplifier and switching applications.

Applications:

  • Linear Amplifiers: Amplifying audio signals or other analog signals in various electronic circuits.
  • Switching Regulators: Used as a switch in DC-DC converters and other power supply circuits.
  • Motor Control: Controlling the speed and direction of DC motors.
  • Inverters: Converting DC voltage to AC voltage in power inverters.
  • Power Amplifiers: Boosting the power of audio or radio frequency signals.

Features:

  • High Collector Current: Capable of handling substantial current flow through the collector.
  • High Power Dissipation: Designed to dissipate significant amounts of power.
  • Low Saturation Voltage: Minimal voltage drop when the transistor is fully turned on.
  • High Breakdown Voltage: Withstands high voltage between collector and emitter.
  • NPN Polarity: An NPN bipolar junction transistor.

Benefits:

  • High Power Handling Capability: Enables the transistor to be used in high-power applications.
  • Efficient Switching: Low saturation voltage leads to efficient switching performance, reducing power losses.
  • Robustness: High breakdown voltage ensures reliable operation in demanding environments.
  • Versatile Application: Suitable for a wide range of amplifier and switching circuits.
  • Readily available: Common transistor with equivalent replacements still manufactured.

Additional Details:

The 2N5305 typically has a collector-emitter voltage (VCEO) rating of 80V and a collector current (IC) rating of 8A. The power dissipation (PD) is typically around 50W. The current gain (hFE) is typically between 20 and 70. It is commonly packaged in a TO-3 package. The operating temperature range is usually between -65°C to +200°C. This is a through-hole component and requires appropriate heat sinking when operated at high power levels. The saturation voltage VCE(sat) is typically around 1V at the rated collector current and base current.

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