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2SK3468

Part No 2SK3468
Manufacturer Fuji Electric
Catalog Hard To Find
Description N CHANNEL SILICON POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Fuji Electric
Win Source Part Number 1127595-2SK3468
Manufacturer Homepage www.fujielectric.co.jp/eng/fdt/scd
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK3468 CAD Model

Description

The 2SK3468 is a silicon N-channel MOSFET designed for switching applications. It features low on-resistance and fast switching speeds, making it suitable for various power control circuits.

Applications

  • Switching Regulators
  • DC-DC Converters
  • Motor Control Circuits
  • Power Inverters
  • Solid State Relays
  • Lighting control circuits

Features

  • N-channel MOSFET: Offers efficient current conduction and switching capabilities.
  • Low on-resistance (RDS(on)): Minimizes power loss and heat generation.
  • Fast switching speed: Enables efficient operation in high-frequency applications.
  • High drain current capability: Allows for handling significant power loads.
  • Avalanche energy rated: Provides robustness against voltage transients.
  • Enhancement mode: Simple gate drive requirements.

Benefits

  • Improved efficiency: Low on-resistance minimizes power dissipation.
  • Reduced heat dissipation: Minimizes the need for extensive heat sinking.
  • Higher operating frequency: Enables smaller and lighter power supply designs.
  • Increased power handling capability: Suitable for demanding applications.
  • Enhanced system reliability: Avalanche energy rating protects against voltage spikes.
  • Simplified circuit design: Enhancement mode simplifies driving requirements.

Additional Details

The 2SK3468 typically comes in a TO-220 package for efficient heat dissipation. Key parameters include drain-source breakdown voltage (VDSS), gate-source threshold voltage (VGS(th)), and continuous drain current (ID). Proper gate drive voltage is essential for achieving optimal performance. Consider using appropriate gate resistors to control switching speed and minimize ringing. The device's avalanche rating ensures that it can withstand transient voltage spikes, enhancing system reliability. When using this MOSFET in switching applications, ensure that adequate heat sinking is provided to maintain the device's junction temperature within its specified limits. Proper layout techniques are also crucial for minimizing parasitic inductance and optimizing switching performance.

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