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2SK1982-01MR

Part No 2SK1982-01MR
Manufacturer Fuji Electric
Catalog JFETs (Junction Field Effect)
Description N-CHANNEL SILICON POWER MOSFET  / Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220F15
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Fuji Electric
Win Source Part Number 159233-2SK1982-01MR
Popularity Medium
Supply and Demand Status Limited
Family Name 2SK1982-01MR
Introduction Date June 07, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK1982-01MR CAD Model

Description

The 2SK1982-01MR is a high-performance, N-channel MOSFET designed for demanding electronic applications requiring efficient power control and management. Its construction focuses on delivering superior load management, making it a preferred choice in advanced power electronic systems.

Features and Benefits

  • Exceptional Power Efficiency: Designed to minimize power loss through low on-resistance, improving overall system efficiency.
  • Rapid Switching Capability: Facilitates high-frequency operations with minimal switching losses.
  • Consistent Thermal Performance: Capable of maintaining optimal operation temperatures even under prolonged heavy load conditions.
  • Compact Design: Offers space-saving advantages for compact and portable device applications.

Applications

  • DC-DC Converters
  • Pulse Width Modulation (PWM) Controllers
  • Photovoltaic Inverter Systems
  • Automotive Electronic Control Units (ECUs)
  • AC-to-DC Power Converters

Additional Details

The 2SK1982-01MR's design incorporates advanced silicon technology, providing an optimal balance between speed and energy consumption. This MOSFET's integration into electronic systems enhances their performance by delivering precise power control. The component's suitability for high-frequency switch-mode power applications makes it a valuable asset in power electronic designs aiming for efficiency and reliability. The 2SK1982-01MR is an excellent choice for engineers looking to extend their devices' lifespan by reducing thermal and switching stress.

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