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2SK1817-01MR

Part No 2SK1817-01MR
Manufacturer Fuji Electric
Catalog JFETs (Junction Field Effect)
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Fuji Electric
Win Source Part Number 159147-2SK1817-01MR
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK1817-01MR CAD Model

Description

Overview of 2SK1817-01MR

The 2SK1817-01MR is engineered to be a versatile N-channel MOSFET with a distinct advantage in various high-power applications. Its fine-tuned design potentiates it as a crucial element in optimizing the performance and efficiency of electronic devices and circuitry.

Features and Benefits

  • Optimized for high-speed switching to enhance device performance.
  • Low capacitance design minimizing signal distortion in sensitive applications.
  • High reliability under dynamic load conditions, suitable for rugged environments.
  • Reduced on-resistance for lowered conduction losses and efficient power utilization.

Applications

  • DC-DC converters for power management
  • Load switch applications
  • RF amplifiers for telecommunications
  • Battery management systems

Additional Details

The 2SK1817-01MR benefits from advanced manufacturing processes, leading to improved junction temperatures and increased handling capabilities. This makes it an ideal choice for today's power-efficient solutions, reducing the risk of thermal-related failures while maintaining reliable operation over extended periods.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $43.4523 $86.9046
4+ $35.6537 $142.6148
6+ $34.5391 $207.2346
7+ $33.4257 $233.9799
9+ $32.3111 $290.7999
12+ $28.9686 $347.6232
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,700 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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