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SSH10N60B

Part No SSH10N60B
Manufacturer Fairchild/ON Semiconductor
Catalog Electronic Wholesale
Description 600V N-Channel MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1259362-SSH10N60B
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSH10N60B CAD Model

Description

The SSH10N60B is a high-voltage N-channel MOSFET manufactured by Fairchild/ON Semiconductor. It's designed for high-efficiency switching applications, offering a combination of fast switching speed, low on-resistance, and robust avalanche performance. This MOSFET is commonly used in power supplies, motor control, and other power conversion circuits.

Applications

  • Switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • DC-DC converters
  • Motor control applications
  • Lighting ballasts

Features

  • N-Channel MOSFET: Provides efficient switching performance.
  • High voltage rating (600V): Suitable for high-voltage applications.
  • Low on-resistance (RDS(on)): Minimizes power losses during conduction.
  • Fast switching speed: Enables high-frequency operation.
  • Avalanche rated: Robust performance under avalanche conditions.
  • Pb-free lead finish: Complies with environmental regulations.

Benefits

  • Improved efficiency: Low on-resistance reduces power dissipation, leading to higher efficiency in power conversion circuits.
  • Reduced heat dissipation: Lower power losses translate to less heat generation, simplifying thermal management.
  • Higher power density: Enables smaller and more compact power supply designs.
  • Enhanced reliability: Avalanche rating provides robustness against voltage transients and overvoltage conditions.
  • Simplified circuit design: Easy to drive and implement in various switching topologies.

Additional Details

The SSH10N60B typically comes in a TO-220 or similar through-hole package. Key specifications include the drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and pulsed drain current (IDM). The gate charge (Qg) and output capacitance (Coss) are also important parameters for determining switching performance. Proper gate drive circuitry is essential to achieve optimal switching speeds and minimize switching losses.

The MOSFET's thermal resistance (RθJC) is a critical parameter for thermal management. A heatsink may be required to keep the junction temperature within its specified limits, especially at high power levels. It is important to consult the datasheet for detailed electrical characteristics, thermal data, and application guidelines.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.7110 $59.3760
38+ $3.0457 $115.7366
59+ $2.9499 $174.0441
81+ $2.8552 $231.2712
105+ $2.7593 $289.7265
141+ $2.4740 $348.8340
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Availability: 3,540 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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