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Same model may have multiple batches, images only for reference.
SGH40N60UFDTU Real Image
Same model may have multiple batches, images only for reference.

SGH40N60UFDTU

Part No SGH40N60UFDTU
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 40A 160W TO3P
Datasheet
SGH40N60UFDTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 40A
Pulsed Collector Current 160A
Collector-emitter saturation voltage(Max) 2.6V @ 15V, 20A
Maximum Power Dissipation 160W
Total Switching Energy(Ets) 160μJ (on), 200μJ (off)
Input Type Standard
Gate Charge 97nC
Turn-on and Turn-off delay time 15ns/65ns
Testing Conditions 300V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) 60ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Win Source Part Number 1095596-SGH40N60UFDTU
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian SGH40N60UFDTU CAD Model

Description

The Fairchild/ON Semiconductor SGH40N60UFDTU is an obsolete (EOL) through-hole mounted IGBT with a maximum collector current of 40A and a collector-emitter breakdown voltage of 600V.

  • Manufacturer: Fairchild/ON Semiconductor
  • Status: Obsolete (EOL)
  • Mounting Type: Through-Hole
  • Type: IGBT
  • Maximum Collector Current: 40A
  • Collector-Emitter Breakdown Voltage: 600V
  • Power Dissipation: 160W
  • Pulsed Collector Current: 160A
  • Category: Discrete Semiconductor Products
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-3PN
  • Collector-Emitter Saturation Voltage (Max): 2.6V @ 15V, 20A
  • Total Switching Energy (Ets): 160μJ (on), 200μJ (off)
  • Turn-On Delay Time: 15ns
  • Turn-Off Delay Time: 65ns

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