The MMBT5089NL is a NPN Bipolar Junction Transistor (BJT) from ON Semiconductor (formerly Fairchild). It is designed for low noise, high gain amplifier applications and comes in a SOT-23 package.

Applications

• Low-noise amplifiers
• High-gain amplifiers
• Audio preamplifiers
• RF amplifiers
• Instrumentation amplifiers

Features

• Low noise figure
• High current gain (hFE)
• Collector-Emitter Voltage VCEO(V): 25
• Continuous Collector Current: 0.05 A
• Low collector-emitter saturation voltage
• SOT-23 package for surface mount applications

Benefits

• Excellent signal amplification with minimal added noise.
• Efficient amplification due to its high current gain.
• Reduces power loss and improves circuit efficiency with its low saturation voltage.
• Suitable for automated assembly.
• Space-saving design for compact electronic devices.

Additional Details

Technical Specifications:

• Collector-Emitter Voltage (VCEO): 25V
• Collector-Base Voltage (VCBO): 30V
• Emitter-Base Voltage (VEBO): 4.5V
• Collector Current (IC): 0.05A
• Power Dissipation (PD): 0.35W
• DC Current Gain (hFE): 300 - 900 (at IC = 1 mA, VCE = 5 V)
• Operating and Storage Junction Temperature Range: -55°C to +150°C

The MMBT5089NL is known for its low noise characteristics, making it suitable for applications where signal clarity is critical. Its high gain and small package size make it a good choice for modern electronic devices. It is RoHS compliant.