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Same model may have multiple batches, images only for reference.
HGTG20N60B3D Real Image
Same model may have multiple batches, images only for reference.

HGTG20N60B3D

Part No HGTG20N60B3D
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 40A 165W TO247
Datasheet
HGTG20N60B3D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 40A
Pulsed Collector Current 160A
Collector-emitter saturation voltage(Max) 2V @ 15V, 20A
Maximum Power Dissipation 165W
Total Switching Energy(Ets) 475μJ (on), 1.05mJ (off)
Input Type Standard
Gate Charge 80nC
Reverse Recovery Time (trr) 55ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 136199-HGTG20N60B3D
Family Name HGTG20N60B3D
Introduction Date January 08, 2002
ECCN EAR99
Country of Origin China, Czech Republic
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian HGTG20N60B3D CAD Model

Description

The Fairchild/ON Semiconductor HGTG20N60B3D is a high-power IGBT transistor that is used in various electronic applications. It is a popular electronic component with a high demand in the market. This product is designed to handle high voltage and high current loads, making it ideal for use in power electronics. The HGTG20N60B3D is available in a TO-247 package and has a maximum collector-emitter breakdown voltage of 600V. It has a maximum current collector of 40A and a maximum power dissipation of 165W. The product has a limited supply and demand status and is not recommended for new designs.

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