The HGT1S7N60C3DS9A is a surface mount device IGBT from Fairchild/ON Semiconductor. It has a reverse recovery time (trr) of 37ns and a gate charge of 23nC. The device has a maximum current collector of 14A and a VCEO maximum collector-emitter breakdown voltage of 600V. The HGT1S7N60C3DS9A has a maximum power dissipation of 60W and a pulsed collector current of 56A. The collector-emitter saturation voltage(Max) is 2V at 15V, 7A. The total switching energy(Ets) is 165μJ (on), 600μJ (off). The device is obsolete(EOL) and has a medium popularity. and the supply and demand status is limited.