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Same model may have multiple batches, images only for reference.
HGT1S7N60A4DS Real Image
Same model may have multiple batches, images only for reference.

HGT1S7N60A4DS

Part No HGT1S7N60A4DS
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 34A 125W TO263AB
Datasheet
HGT1S7N60A4DS Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 34A
Pulsed Collector Current 56A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 7A
Maximum Power Dissipation 125W
Total Switching Energy(Ets) 55μJ (on), 60μJ (off)
Input Type Standard
Gate Charge 37nC
Turn-on and Turn-off delay time 11ns/100ns
Testing Conditions 390V, 7A, 25 Ohm, 15V
Reverse Recovery Time (trr) 34ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263AB
Win Source Part Number 068073-HGT1S7N60A4DS
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HGT1S7N60A4DS CAD Model

Description

This product is an IGBT type electronic component with a maximum collector-emitter breakdown voltage of 600V. It is designed for use in discrete semiconductor products. The product has a maximum power dissipation of 125W and a pulsed collector current of 56A. The product is mounted using SMD (SMT) technology and packaged in TO-263AB. The product has a turn-on and turn-off delay time of 11ns/100ns. If you require this product for your electronic project, you should purchase it from a reliable source.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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