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FGA50N100BNTDTU

Part No FGA50N100BNTDTU
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1000V 50A 156W TO3P / Trans IGBT Chip N-CH 1000V 50A 156000mW 3-Pin(3+Tab) TO-3P Tube
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
IGBT Type NPT and Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 1000V
Maximum Current Collector 50A
Pulsed Collector Current 100A
Collector-emitter saturation voltage(Max) 2.9V @ 15V, 60A
Maximum Power Dissipation 156W
Input Type Standard
Gate Charge 275nC
Reverse Recovery Time (trr) 1.5μs
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Win Source Part Number 204171-FGA50N100BNTDTU
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 450
Family Name FGA50N100BNTD
Introduction Date December 22, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian FGA50N100BNTDTU CAD Model

Description

The FGA50N100BNTD is a high voltage IGBT designed by Fairchild/ON Semiconductor. This IGBT is part of the FGA50N100BNTD family.

  • Collector-Emitter Breakdown Voltage (Max): 1000V
  • Current Collector (Max): 50A
  • Power Dissipation (Max): 156W
  • Reverse Recovery Time (trr): 1.5μs
  • Package: TO-3P
  • Halogen-Free Standard: Compliant
  • Estimated EOL Date: 2026

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $47.0628 $94.1256
3+ $38.6151 $115.8453
5+ $37.4093 $187.0465
7+ $36.2023 $253.4161
9+ $34.9953 $314.9577
12+ $31.3756 $376.5072
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,540 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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