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FGA40T65SHDF

Part No FGA40T65SHDF
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTO / IGBT Trench Field Stop 650 V 80 A 268 W Through Hole TO-3PN
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Fairchild Semiconductor
Package Bulk
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 1.81V @ 15V, 40A
Power - Max 268 W
Switching Energy 1.22mJ (on), 440µJ (off)
Input Type Standard
Gate Charge 68 nC
Td (on/off) @ 25°C 18ns/64ns
Test Condition 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr) 101 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3PN
ECCN EAR99
HTSUS 8542.39.0001
Other Names 2156-FGA40T65SHDF,ONSFSCFGA40T65SHDF
Standard Package 1
Win Source Part Number 1013901-FGA40T65SHDF
Ultra Librarian 3D Model Ultra Librarian FGA40T65SHDF CAD Model

Description

The Fairchild Semiconductor FGA40T65SHDF is a Trench Field Stop IGBT transistor with a Voltage - Collector Emitter Breakdown (Max) of 650 V and a Current - Collector (Ic) (Max) of 80 A.

  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
  • Gate Charge: 68 nC
  • Package: TO-3P-3, SC-65-3
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • Applications: Industrial power

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2857 $59.4282
62+ $1.8757 $116.2934
96+ $1.8168 $174.4128
132+ $1.7579 $232.0428
170+ $1.6990 $288.8300
228+ $1.5234 $347.3352
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Availability: 50 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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