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AP30T10GH-HF

Part No AP30T10GH-HF
Manufacturer Advanced Power Electronics Corp.
Catalog Hard To Find
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Sample
Rohs State rohs
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Manufacturer Advanced Power Electronics Corp.
Win Source Part Number 1145629-AP30T10GH-HF
Manufacturer Homepage www.a-power.com.tw
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AP30T10GH-HF CAD Model

Description

The AP30T10GH-HF is a 30V N-Channel enhancement mode power MOSFET from Advanced Power Electronics Corp. It is designed for high efficiency and low on-resistance applications. This MOSFET is commonly used in a variety of power management circuits.

Applications

  • Synchronous Rectification in AC/DC and DC/DC Converters
  • Power Tool Applications
  • Battery Protection Circuits
  • Motor Control Circuits
  • Load Switching

Features

  • Low On-Resistance: Reduces power loss and improves efficiency.
  • Low Gate Charge: Minimizes switching losses.
  • High Avalanche Energy: Provides robustness and reliability.
  • RoHS Compliant: Environmentally friendly, adhering to Restriction of Hazardous Substances directives.
  • Halogen-Free: Reduces environmental impact.

Benefits

  • Increased Efficiency: Lower on-resistance results in less power dissipation and higher overall efficiency of the application.
  • Improved Thermal Performance: The low on-resistance reduces heat generation, leading to improved thermal management.
  • Enhanced Reliability: High avalanche energy ensures robust performance under transient conditions.
  • Reduced System Size: Higher efficiency can allow for smaller heat sinks and overall system size reduction.
  • Environmentally Compliant: RoHS and Halogen-Free compliance ensures adherence to environmental regulations.

Technical Specifications

The AP30T10GH-HF features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 60A (depending on the package and operating conditions). The typical on-resistance (Rds(on)) is very low, contributing to its high efficiency. The gate threshold voltage is typically around 2V. It comes in a TO-252 package which is suitable for surface mounting.

This MOSFET is designed to provide efficient and reliable power switching for a wide range of applications. Its low on-resistance and fast switching speed make it an excellent choice for synchronous rectification and other high-frequency switching applications.

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