The EDE1116AGBG-8E-F is a DDR (Double Data Rate) SDRAM (Synchronous Dynamic Random-Access Memory) module manufactured by Elpida Memory. DDR SDRAM transfers data on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate compared to single data rate (SDR) SDRAM. This results in improved memory bandwidth and system performance.

Applications

• Desktop PCs
• Laptop PCs
• Servers
• Graphics cards
• Embedded systems

Features

• Double Data Rate (DDR) architecture
• High-speed data transfer
• Low voltage operation (specific voltage varies by DDR generation)
• Synchronous operation with system clock
• JEDEC standard compliance

Benefits

• Increased memory bandwidth for improved system performance
• Reduced power consumption compared to older memory technologies
• Enhanced responsiveness in demanding applications
• Reliable data storage and retrieval

Additional Details

The '8E-F' suffix likely denotes the speed grade, timing characteristics, and temperature range of the memory module. The '1116' in the part number suggests a density of either 128MB or 256MB. Critical specifications include clock frequency, CAS latency (CL), and other timing parameters. Elpida Memory was acquired by Micron Technology, so relevant datasheets could be available under either manufacturer's name. Understanding the DDR generation (DDR, DDR2, DDR3) is essential, as it influences the operating voltage and overall performance characteristics.