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ZXTP2008ZQTA

Part No ZXTP2008ZQTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 5.5A SOT89-3 / Bipolar (BJT) Transistor PNP 30 V 5.5 A 110MHz 1.5 W Surface Mount SOT-89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Transistor Type PNP
Current - Collector (Ic) (Max) 5.5 A
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 175mV @ 500mA, 5.5A
Current - Collector Cutoff (Max) 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 1V
Power - Max 1.5 W
Frequency - Transition 110MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-243AA
Supplier Device Package SOT-89-3
Base Product Number ZXTP2008
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names ZXTP2008ZQTADI
Standard Package 1,000
Win Source Part Number 1106432-ZXTP2008ZQTA
Ultra Librarian 3D Model Ultra Librarian ZXTP2008ZQTA CAD Model

Description

Introducing the ZXTP2008ZQTA Transistor from Diodes Incorporated

The ZXTP2008ZQTA is a high-performance PNP transistor designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This device is housed in a compact SOT89 package, making it suitable for surface-mount technology (SMT) applications where space is at a premium.

With its robust design, the ZXTP2008ZQTA offers a collector current of up to 2A, which makes it capable of handling moderate power loads in various electronic circuits. Its high power dissipation and continuous collector current rating ensure that it can manage the demands of a wide range of applications, from power management to signal amplification.

The transistor features a collector-emitter voltage (VCEO) of -20V, providing a good safety margin for circuits operating at standard voltage levels. This characteristic, along with a collector-base voltage (VCBO) of -30V and an emitter-base voltage (VEBO) of -5V, ensures the device's stability and reliability across different operating conditions.

One of the key advantages of the ZXTP2008ZQTA is its low saturation voltage, which minimizes power loss and improves efficiency in switching applications. Additionally, the device boasts a high gain-bandwidth product, which is beneficial for applications requiring fast switching and accurate signal amplification.

Diodes Incorporated has designed the ZXTP2008ZQTA with an emphasis on performance and versatility. It is an ideal choice for designers looking for a general-purpose PNP transistor that can be used in a variety of circuits, such as power supply regulators, motor controllers, and audio amplifiers. The transistor's SOT89 package is also RoHS compliant, ensuring that it meets contemporary environmental standards for electronic components.

In conclusion, the ZXTP2008ZQTA from Diodes Incorporated is a reliable and efficient solution for designers who need a PNP transistor that combines power handling capabilities with compactness and performance. Its robust design and electrical characteristics make it a versatile component for a broad spectrum of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5245 $60.3175
270+ $0.4304 $116.2080
420+ $0.4170 $175.1400
575+ $0.4036 $232.0700
745+ $0.3901 $290.6245
995+ $0.3497 $347.9515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,313 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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