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DMN4027SSDQ-13

Part No DMN4027SSDQ-13
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET BVDSS: 31V~40V SO-8 T&R 2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta)
Rds On (Max) @ Id, Vgs 27mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 604pF @ 20V
Power - Max 1.25W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
Base Product Number DMN4027
Standard Package 2,500 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 585495-DMN4027SSDQ-13
Ultra Librarian 3D Model Ultra Librarian DMN4027SSDQ-13 CAD Model

Description

The DMN4027SSDQ-13, from Diodes Incorporated, is a high-performance dual N-Channel enhancement mode Field Effect Transistor (MOSFET) designed for a wide range of applications. This MOSFET is a testament to Diodes Incorporated's commitment to providing industry-leading solutions that combine efficiency with high thermal performance.

Featuring advanced trench technology, the DMN4027SSDQ-13 offers excellent R<sub>DS(on) and low gate charge, which translates into reduced conduction and switching losses. This makes it an ideal choice for power management tasks within both commercial and industrial electronic equipment.

Key specifications of the DMN4027SSDQ-13 include:

  • Drain-Source Voltage (V<sub>DS): 40V, which allows it to handle moderate voltage applications with ease.
  • Continuous Drain Current (I<sub>D): 6.5A at 25°C, ensuring that it can support a significant current load.
  • R<sub>DS(on): As low as 27mΩ at V<sub>GS = 10V, providing efficient operation and minimal energy loss during conduction.
  • Fast Switching Speed: The device is designed for applications requiring fast switching action, which contributes to improved performance and reduced power losses.
  • Temperature Range: Operational temperatures ranging from -55°C to +150°C, offering reliability in various environmental conditions.

Encased in a compact PowerDI®5060-8 package, the DMN4027SSDQ-13 is not only space-efficient but also features a thermally efficient design that aids in the dissipation of heat. This MOSFET is RoHS compliant and halogen-free, reflecting Diodes Incorporated's dedication to environmental sustainability.

Applications for this dual N-Channel MOSFET include power supply circuits, DC-DC converters, load switches, and motor drives. Its high efficiency and thermal performance make it particularly well-suited for power-intensive applications where space is at a premium and thermal management is critical.

Overall, the DMN4027SSDQ-13 is a versatile and robust component that offers designers a combination of performance and reliability, making it an excellent choice for a broad array of power management applications.

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