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DMN61D8LVTQ-7

Part No DMN61D8LVTQ-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description Provides a reliable and robust interface between sensitive logic and DC relay coils | MOSFET 2N-CH 60V 0.63A TSOT26
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel
Transistor Polarity 2 N-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 630mA
Rds On (Maximum) at Id, Vgs 1.8Ohm at 150mA, 5V
Gate Source Voltage(th) (Maximum) at Id 2V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 0.74nC at 5V
Input Capacitance (Ciss) (Maximum) at Vds 12.9pF at 12V
Maximum Power 820mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-26
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 759237-DMN61D8LVTQ-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN61D8LVTQ-7 CAD Model

Description

Product Overview: DMN61D8LVTQ-7 from Diodes Incorporated

The DMN61D8LVTQ-7 is a high-performance, dual N-channel enhancement mode field effect transistor (FET) designed by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, and analog semiconductor markets. This product is particularly well-suited for a wide range of applications, including power management, load switching, and converter circuits in consumer, industrial, and automotive industries.

Key Features

  • Low On-Resistance: The DMN61D8LVTQ-7 boasts a very low on-resistance, which translates to high efficiency and minimal power loss during operation, making it an excellent choice for power-sensitive applications.
  • Dual MOSFET Configuration: This device integrates two N-channel MOSFETs in a single package, providing a compact solution that saves space on printed circuit boards (PCBs).
  • High Continuous Drain Current: It is capable of supporting a high continuous drain current, which allows it to handle significant power levels, suitable for demanding tasks.
  • Fast Switching Speed: The fast switching capabilities of the DMN61D8LVTQ-7 ensure efficient operation at high frequencies, which is critical for modern electronic applications.
  • Low Threshold Voltage: A low threshold voltage ensures that the device can be easily turned on at lower gate voltages, improving its compatibility with low-voltage drive signals.

Package and Reliability

The DMN61D8LVTQ-7 is offered in a compact DFN2020-6 (Type B) package, which is characterized by its small footprint and low profile. The package is RoHS compliant, reflecting Diodes Incorporated's commitment to environmental responsibility. Additionally, the device is designed to meet or exceed the reliability standards required in commercial and industrial applications, ensuring a long operational life and stable performance.

Applications

With its robust design and versatile features, the DMN61D8LVTQ-7 is suitable for a variety of applications such as:

  • Power Management Systems
  • DC-DC Converters
  • Load Switching Circuits
  • Battery Management
  • Motor Control Circuits
  • Portable Electronic Devices

In conclusion, the DMN61D8LVTQ-7 from Diodes Incorporated is a reliable and efficient solution for designers looking to optimize their power management and switching applications with a dual N-channel enhancement mode MOSFET that combines performance and compactness.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.5188 $52.7820
35+ $2.8873 $101.0555
54+ $2.7970 $151.0380
74+ $2.7068 $200.3032
96+ $2.6166 $251.1936
128+ $2.3459 $300.2752
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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