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DMN3035LWN-7

Part No DMN3035LWN-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET 2N-CH 30V 5.5A 8VDFN / Low On-Resistance
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 5.5A
Rds On (Maximum) at Id, Vgs 35mOhm at 4.8A, 10V
Vgs(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 9.9nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 399pF at 15V
Power - Max 770mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-PowerVDFN
Supplier Device Package V-DFN3020-8
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803641-DMN3035LWN-7
Ultra Librarian 3D Model Ultra Librarian DMN3035LWN-7 CAD Model

Description

DMN3035LWN-7 - Diodes Incorporated

The DMN3035LWN-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets.

This particular MOSFET is part of Diodes Incorporated's extensive range of power management devices, which are known for their efficiency and reliability. The DMN3035LWN-7 is encapsulated in a small surface-mount package, specifically the SOT-323, which is ideal for space-constrained applications that require high-density board assembly.

Key Features:

  • Low On-Resistance: The device features a low on-resistance (R<sub>DS(on)), which improves efficiency by reducing power loss during operation.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), the DMN3035LWN-7 can handle significant power for its size, making it suitable for high-performance applications.
  • Enhancement Mode: As an enhancement mode FET, it requires a positive gate voltage to conduct, which allows for easy control and integration into various circuits.
  • Low Threshold Voltage: The low threshold voltage (V<sub>GS(th)) ensures that the device can be turned on at lower voltages, enhancing its applicability in low-voltage driven systems.
  • Fast Switching Speed: The fast switching capabilities of this MOSFET make it an excellent choice for high-speed switching applications.
  • RoHS Compliant: The DMN3035LWN-7 complies with the RoHS directive, which restricts the use of certain hazardous materials in electronic equipment.

Applications:

The DMN3035LWN-7 is suitable for a wide range of applications due to its versatility and high-performance characteristics. Typical applications include:

  • Power Management Circuits
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Control Circuits

With its compact footprint and robust performance features, the DMN3035LWN-7 from Diodes Incorporated is an excellent choice for designers looking to optimize their power management solutions in both portable and stationary electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.2017 $58.4930
700+ $0.1656 $115.9200
1,085+ $0.1603 $173.9255
1,490+ $0.1552 $231.2480
1,925+ $0.1501 $288.9425
2,580+ $0.1344 $346.7520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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