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DMN3022LDG-13

Part No DMN3022LDG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 25V-30V POWERDI333  /  Mosfet Array 2 N-Channel (Dual) 30V 7.6A (Ta), 15A (Tc) 1.96W (Ta) Surface Mount PowerDI3333-8 (Type D)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Diodes Incorporated
Package Tape & Reel (TR)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 7.6A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2.1V @ 250µA, 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 4.5V, 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 481pF @ 15V, 996pF @ 15V
Power - Max 1.96W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerLDFN
Supplier Device Package PowerDI3333-8 (Type D)
Base Product Number DMN3022
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Win Source Part Number 1055765-DMN3022LDG-13
Ultra Librarian 3D Model Ultra Librarian DMN3022LDG-13 CAD Model

Description

DMN3022LDG-13 MOSFET by Diodes Incorporated

The DMN3022LDG-13 is a high-performance, N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is part of Diodes Incorporated's extensive range of power management devices, known for their reliability and efficiency in various electronic applications.

Key Features

  • Low On-Resistance: The DMN3022LDG-13 offers low on-resistance, typically R<sub>DS(on), which results in reduced conduction losses and improved power efficiency, making it an ideal choice for power-sensitive applications.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D) capability, this MOSFET can handle significant power levels, which is crucial for applications requiring high current density.
  • Advanced Packaging: Encased in a small and thermally efficient PowerDI5060-8 package, the DMN3022LDG-13 ensures a compact footprint and excellent thermal performance, allowing for closer component placement in space-constrained designs.
  • Fast Switching Speed: The device is characterized by fast switching speeds, which helps in reducing switching losses and improving overall system efficiency, especially in high-frequency switching applications.
  • Gate Charge Optimization: Optimized gate charge (Q<sub>G) allows for reduced switching energy and enhances the overall performance in high-speed circuitry.

Applications

The DMN3022LDG-13 is versatile and can be used in a wide range of applications, including:

  • Power supply converters
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Load switches
  • Telecom and computing systems

Engineers and designers often choose the DMN3022LDG-13 for its combination of high efficiency, robust thermal performance, and space-saving packaging. Whether for industrial, automotive, or consumer electronics, the DMN3022LDG-13 is a reliable MOSFET that provides a balance between power density and ease of use, making it a go-to component for power management solutions.

For detailed specifications, application notes, and additional resources, interested parties are encouraged to visit the official Diodes Incorporated website or contact their local sales representative.

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