The DMMT5551S-7-F is a high-performance, dual NPN transistor from Diodes Incorporated, designed to deliver a combination of low voltage operation and high efficiency, making it suitable for a wide range of applications. This transistor is housed in a compact SOT-363 package, which is known for its small footprint and excellent power handling capabilities.

Key Features

• Transistor Type: Dual NPN
• Package: SOT-363
• Configuration: Single
• Collector-Emitter Voltage (VCEO): 40V
• Collector-Base Voltage (VCBO): 80V
• Emitter-Base Voltage (VEBO): 6V
• Continuous Collector Current (IC): 600mA
• Power Dissipation (Pd): 300mW
• DC Current Gain (hFE): 100 to 600
• Operating Temperature Range: -55°C to +150°C

Applications

The DMMT5551S-7-F is ideal for a variety of applications, including but not limited to:

• Power management circuits
• Switching regulators
• Signal amplification
• Driver stages in audio amplifiers
• Multiple configuration logic-level conversion

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The DMMT5551S-7-F is manufactured with the highest standards ensuring reliable performance and longevity. This product is lead-free, halogen-free, and RoHS compliant, reflecting Diodes Incorporated's dedication to environmental responsibility.

Support and Resources

Customers can access comprehensive technical support and resources for the DMMT5551S-7-F, including datasheets, application notes, and design tools, directly through the Diodes Incorporated website or through authorized distributors. This ensures that designers can efficiently integrate this component into their projects with confidence and ease.