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DMMT3904W-7-F

Part No DMMT3904W-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 40V 0.2A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual) Matched Pair
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 300mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 200mW
Frequency - Transition 300MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 014399-DMMT3904W-7-F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMMT3904W-7-F CAD Model

Description

Diodes Incorporated DMMT3904W-7-F Transistor

The DMMT3904W-7-F is a high-performance, dual NPN transistor from Diodes Incorporated, designed to deliver efficient signal amplification and switching capabilities. This product is a testament to Diodes Incorporated's commitment to providing innovative and reliable semiconductor solutions for a wide range of electronic applications.

Encased in a compact SOT-363 package, the DMMT3904W-7-F offers a small footprint, making it ideal for space-constrained applications. The dual transistor configuration is particularly beneficial for designs where board space is at a premium, allowing designers to implement multiple transistors with fewer components.

The DMMT3904W-7-F features two NPN bipolar junction transistors (BJTs) that boast a collector-emitter voltage (VCEO) of 40V and a collector current (IC) of up to 200mA. This makes the device suitable for a variety of applications, including signal processing, amplification, and switching tasks in consumer electronics, telecommunications, and industrial equipment.

Key specifications of the DMMT3904W-7-F include:

  • Continuous Collector Current (IC): 200mA
  • Collector-Emitter Voltage (VCEO): 40V
  • Emitter-Base Voltage (VEBO): 6V
  • Power Dissipation (PD): 300mW
  • DC Current Gain (hFE): 100 to 300
  • Transition Frequency (fT): 300MHz

The device also provides excellent hFE linearity, which ensures consistent gain performance over the entire range of operating conditions. The high transition frequency makes the DMMT3904W-7-F an excellent choice for high-speed switching and amplification in RF applications.

For ease of implementation, the DMMT3904W-7-F is designed to be compatible with automated assembly processes, including surface mount technology (SMT). The product is also RoHS compliant, minimizing the environmental impact by excluding hazardous substances commonly found in electronic components.

In summary, the DMMT3904W-7-F from Diodes Incorporated is a versatile, dual NPN transistor that offers robust performance in a miniature package. Its high current capability, voltage rating, and transition frequency make it a go-to choice for engineers looking to optimize their designs for efficiency and space-saving without compromising on quality or performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,080+ $0.0465 $50.2200
2,295+ $0.0436 $100.0620
3,565+ $0.0421 $150.0865
5,105+ $0.0392 $200.1160
6,635+ $0.0377 $250.1395
8,290+ $0.0362 $300.0980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,740 pieces
MOQ: 1080 pcs
Order Increment : 1 pcs
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