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DMG7401SFGQ-7

Part No DMG7401SFGQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Channel Type Type P
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 20V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 58nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2987pF @ 15V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 940mW (Ta)
Rds On (Maximum) @ Id, Vgs 11 mOhm @ 12A, 20V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerDI3333-8
Package 8-PowerWDFN
Win Source Part Number 1168087-DMG7401SFGQ-7
Manufacturer Homepage www.diodes.com
Popularity Medium
Supply and Demand Status Limited
Family Name DMG7401SFGQ
Introduction Date September 15, 2015
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian DMG7401SFGQ-7 CAD Model

Description

DMG7401SFGQ-7 - High-Performance MOSFET from Diodes Incorporated

The DMG7401SFGQ-7 is a cutting-edge, N-channel enhancement mode Field Effect Transistor (MOSFET) developed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is part of Diodes Incorporated's extensive range of power management devices, designed to cater to a wide variety of applications that require high efficiency and power density.

Key Features

  • Low On-Resistance: The DMG7401SFGQ-7 boasts an extremely low on-resistance (R<sub>DS(on)), which significantly reduces power losses during operation, enhancing overall efficiency and performance.
  • High Continuous Drain Current: This MOSFET supports a high continuous drain current (I<sub>D), making it suitable for demanding applications that require robust current handling capabilities.
  • Advanced Packaging: Encased in a Green™ Trench MOSFET package, the DMG7401SFGQ-7 not only ensures superior thermal performance but also contributes to environmental sustainability.
  • Fast Switching Speed: With its fast switching characteristics, this device is ideal for high-speed circuit designs, ensuring minimal delay and increased circuit efficiency.

Applications

The versatility of the DMG7401SFGQ-7 makes it a perfect fit for a broad spectrum of applications, including but not limited to:

  • Power Management Systems
  • DC-DC Converters
  • Motor Drives
  • Load Switches
  • Battery Management
  • Computing and Server Applications

Product Specifications

The DMG7401SFGQ-7 operates with a maximum drain-source voltage (V<sub>DS) characteristic of 30V, which provides a good balance between performance and robustness for various electronic designs. Its threshold voltage (V<sub>GS(th)) ensures that the device can be easily driven at lower gate voltages, making it compatible with logic-level circuits.

In summary, the DMG7401SFGQ-7 MOSFET from Diodes Incorporated represents a blend of high performance, efficiency, and reliability. Its superior electrical characteristics and versatile application scope make it an excellent choice for designers looking to optimize their power management solutions. With this MOSFET, engineers can expect not only to meet but exceed the demands of modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6287 $50.2960
195+ $0.5159 $100.6005
305+ $0.4998 $152.4390
415+ $0.4837 $200.7355
535+ $0.4675 $250.1125
720+ $0.4192 $301.8240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,688 pieces
MOQ: 270 pcs
Order Increment : 1 pcs
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