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DMC2053UVT-7

Part No DMC2053UVT-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET BVDSS: 8V-24V TSOT26 T&R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Diodes Incorporated
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel Complementary
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta), 3.2A (Ta)
Rds On (Max) @ Id, Vgs 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.5V, 5.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 369pF @ 10V, 440pF @ 10V
Power - Max 700mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-26
Base Product Number DMC2053
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 844915-DMC2053UVT-7
Ultra Librarian 3D Model Ultra Librarian DMC2053UVT-7 CAD Model

Description

DMC2053UVT-7 - A High-Performance MOSFET from Diodes Incorporated

The DMC2053UVT-7 is a state-of-the-art, dual N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is housed in an ultra-compact and surface-mountable SOT-23 package, making it ideal for space-constrained applications.

With its advanced technology and design, the DMC2053UVT-7 provides high-speed switching performance and low on-resistance, which significantly improves the efficiency and thermal performance of a wide range of electronic circuits. The device is characterized by a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 3.4A at a temperature of 25°C, showcasing its ability to handle moderate power levels in a small form factor.

The DMC2053UVT-7 features a low gate threshold voltage (VGS(th)), which means it requires less voltage to turn on, enabling it to be easily driven by logic-level voltages. This characteristic makes it particularly suitable for low-voltage and battery-powered applications. Additionally, its fast switching speeds reduce energy losses during the transition periods of switching applications, which is critical for power efficiency.

Diodes Incorporated has designed the DMC2053UVT-7 with robustness in mind. It offers protection against electrostatic discharge (ESD) with integrated ESD protection diodes, safeguarding the device during handling and operation. The MOSFET's low gate charge (QG) and low input capacitance (Ciss) contribute to its excellent AC switching characteristics, making it an excellent choice for high-frequency power switching and load switching applications.

Applications that can benefit from the DMC2053UVT-7 include power management circuits, DC-DC converters, motor control systems, and other high-efficiency power conversion applications. Its reliability and performance make it a go-to component for design engineers looking to optimize their power systems without compromising on space or power handling.

In summary, the DMC2053UVT-7 is a testament to Diodes Incorporated's commitment to providing innovative semiconductor solutions that meet the evolving needs of modern electronic systems. Its compact size, high efficiency, and robust protection features make it an excellent choice for a wide array of power switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.1992 $50.7960
615+ $0.1635 $100.5525
950+ $0.1584 $150.4800
1,305+ $0.1533 $200.0565
1,690+ $0.1482 $250.4580
2,260+ $0.1329 $300.3540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 102,000 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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