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2N7002DW-7-F

Part No 2N7002DW-7-F
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 0.23A SOT-363
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 230mA
Maximum Rds On at Id,Vgs 7.5 Ohm @ 50mA, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Input Capacitance 50pF @ 25V
Maximum Power Dissipation 310mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 005719-2N7002DW-7-F
Family Name 2N7002DW
Introduction Date May 16, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2N7002DW-7-F CAD Model

Description

Product Overview: 2N7002DW-7-F by Diodes Incorporated

The 2N7002DW-7-F is a high-performance, dual N-channel enhancement mode field-effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is housed in a small surface-mount package, making it ideal for compact electronic applications where space is at a premium.

Key Features

  • Low On-Resistance: The 2N7002DW-7-F boasts a low on-resistance, which ensures minimal power loss and improved efficiency during operation.
  • Dual MOSFET Configuration: This product features two N-channel MOSFETs in a single package, providing design flexibility and space-saving advantages.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET can operate at high frequencies, which is essential for power management and conversion in modern electronic devices.
  • Low Threshold Voltage: The low threshold voltage allows for operation at lower gate voltages, making it compatible with low-voltage logic circuits.
  • Surface-Mount Package: The SOT-363 package is compact and suitable for automated assembly processes, contributing to reduced manufacturing costs and time.

Applications

The versatility of the 2N7002DW-7-F allows it to be used in a wide range of applications, including:

  • Power management circuits
  • DC/DC converters
  • Load switches
  • Motor control circuits
  • Computer peripherals
  • Portable electronic devices

Quality and Reliability

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The 2N7002DW-7-F is no exception, with rigorous testing and quality control measures in place to ensure consistent performance across all units. This product is also compliant with RoHS standards, reflecting the company's dedication to environmental responsibility.

Conclusion

The 2N7002DW-7-F from Diodes Incorporated is an exemplary component for designers looking for a reliable and efficient dual N-channel MOSFET. Its low on-resistance, high-speed switching, and compact form factor make it an excellent choice for a multitude of electronic applications where performance and space savings are critical.

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Pricing & Ordering

Quantity Unit Price Ext. Price
705+ $0.0713 $50.2665
1,500+ $0.0668 $100.2000
2,325+ $0.0646 $150.1950
3,330+ $0.0601 $200.1330
4,330+ $0.0578 $250.2740
5,410+ $0.0555 $300.2550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,000 pieces
MOQ: 705 pcs
Order Increment : 1 pcs
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