2N5912 Real Image
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Central Semiconductor Corp
Packaging Bulk
Status Obsolete
Mounting Style Through Hole
Manufacturer Package TO-78-6 Metal Can
Supplier Device Package TO-78-6
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 153099-2N5912
Popularity Low
Supply and Demand Status Limited
Family Name 2N5912
Introduction Date August 11, 1997
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2N5912 CAD Model

Description

2N5912 Transistor

The 2N5912 is a powerful NPN transistor designed specifically for use in RF and microwave applications. It offers high speed, low noise, and high gain frequencies, meeting the challenging demands of advanced communication technologies.

  • Features and Benefits:
    • Optimal performance in high-frequency RF operations
    • Low noise factor for minimal signal interference
    • Superior gain and temperature stability
  • Applications:
    • Microwave amplifiers
    • Wireless communication devices
    • High-frequency oscillator circuits
  • Additional Details:
    • Maximum Collector-Emitter Voltage (V<sub>CEO): 25 V
    • Designed for use up to 1 GHz frequency range
    • Package: Hermetic for environmental robustness

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