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TF14N50

Part No TF14N50
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 2014+
Reference case TO220F
Manufacturer Alpha & Omega Semiconductor Inc.
Manufacturer Homepage www.aosmd.com
Win Source Part Number 750028-TF14N50
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TF14N50 CAD Model

Description

The TF14N50 is a 500V N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Alpha & Omega Semiconductor Inc. It is designed for high-voltage, high-speed switching applications. This MOSFET features a low on-resistance (RDS(on)), which minimizes power losses during switching and conduction, leading to improved efficiency.

Applications:

  • Switching Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • DC-DC Converters
  • Motor Control
  • Lighting Ballasts
  • Uninterruptible Power Supplies (UPS)

Features:

  • N-Channel MOSFET: Provides fast switching speeds and efficient power handling.
  • High Voltage Rating (500V): Suitable for high-voltage applications.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses and improves efficiency.
  • Fast Switching Speed: Enables high-frequency operation.
  • Avalanche Rated: Can withstand avalanche breakdown conditions.
  • Lead-Free: Compliant with RoHS directives, minimizing environmental impact.
  • Typically Available in TO-220 or TO-220F Package: Offers good thermal performance.

Benefits:

  • High Efficiency: Low on-resistance minimizes power dissipation, leading to higher efficiency.
  • Fast Switching: Enables higher switching frequencies, reducing the size and cost of passive components.
  • Robust Performance: Avalanche rating provides protection against voltage transients.
  • Simplified Design: Easy to integrate into existing circuits.
  • Reliable Operation: Designed for reliable performance in demanding applications.

Additional Details:

The TF14N50's key parameters include the gate threshold voltage (VGS(th)), drain current (ID), and total gate charge (QG). These parameters are specified in the Alpha & Omega Semiconductor Inc. datasheet. The datasheet also provides information on the device's thermal characteristics, such as junction-to-case thermal resistance (RθJC) and junction-to-ambient thermal resistance (RθJA).

Proper heatsinking is essential to ensure reliable operation at high power levels. The datasheet provides guidelines for selecting an appropriate heatsink based on the application's power dissipation requirements. Careful PCB layout is also important to minimize parasitic inductance and capacitance, which can affect switching performance. The datasheet includes recommended soldering profiles and handling precautions.

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