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Same model may have multiple batches, images only for reference.
AOW7S60 Real Image
Same model may have multiple batches, images only for reference.

AOW7S60

Part No AOW7S60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description 600V 7A a MOS TM Power Transistor
Datasheet
AOW7S60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Series aMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.9V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 8.2nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 372pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 104W (Tc)
Rds On (Maximum) @ Id, Vgs 600 mOhm @ 3.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-262
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1145076-AOW7S60
Manufacturer Homepage www.aosmd.com
Popularity Medium
Supply and Demand Status Balance
Family Name AOW7S60
Introduction Date August 18, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian AOW7S60 CAD Model

Description

The Alpha & Omega Semiconductor Inc. aMOS series MOSFET is a high-performance, N-channel type transistor that operates @ a drain-source voltage of 600V. The AOW7S60 MOSFET has a maximum drain current of 7A and a maximum power dissipation of 104W (Tc).

  • MOSFET Type: N-Channel
  • Drain-Source Voltage: 600V
  • Maximum Drain Current: 7A
  • Maximum Power Dissipation: 104W (Tc)
  • Gate Charge (Qg): 8.2nC @ 10V
  • Input Capacitance (Ciss): 372pF @ 100V
  • Rds On (Maximum) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Operating Temperature: -55°C ~ 150°C (TJ)

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