The AOE6930 is a Dual N-Channel Asymmetrical FET designed and manufactured by Alpha & Omega Semiconductor Inc.

• Product Type: Discrete Semiconductor Product
• Compliance: Halogen-free and compliant
• Origin: Made in China
• Popularity: Medium
• Supply and Demand: Limited
• Manufacturer Pack Quantity: 3,000
• MSL Level: 1 (Unlimited)
• Package: 8-DFN (5x6) packaging tape and reel
• Maximum Power: 24W, 75W
• Vds - Drain-Source Breakdown Voltage: 30V
• Id - Continuous Drain Current: 22A, 85A
• Rds On (Maximum) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
• Gate Source Voltage(th) (Maximum) @ Id: 2.1V @ 250μA, 1.9V @ 250μA
• Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
• Input Capacitance (Ciss) (Maximum) @ Vds: 1075pF @ 15V, 5560pF @ 15V