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AO8802

Part No AO8802
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Electronic Wholesale
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Reference Date Code 2003+
Reference case MSOP8
Manufacturer Alpha & Omega Semiconductor Inc.
Manufacturer Homepage www.aosmd.com
RoHS State Request Verification
Win Source Part Number 751851-AO8802
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AO8802 CAD Model

Description

The AO8802, manufactured by Alpha & Omega Semiconductor Inc., is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for a variety of power management applications. Its low on-resistance (RDS(on)) and fast switching speed make it well-suited for efficient and compact circuit designs. Understanding the MOSFET's characteristics is crucial for optimizing its performance in its intended application.

Applications:

  • Load Switching
  • Power Management in Portable Devices
  • DC-DC Converters
  • Battery Protection Circuits
  • Power Adapters

Features:

  • P-Channel MOSFET: Suitable for high-side switching applications.
  • Low RDS(on): Minimizes power loss and improves efficiency.
  • Fast Switching Speed: Enables efficient operation in high-frequency circuits.
  • Low Gate Charge: Reduces drive power requirements.
  • Small Footprint: Allows for compact circuit designs.
  • Logic Level Gate Drive: Can be driven directly from logic-level signals.

Benefits:

  • Improved Power Efficiency: Low RDS(on) minimizes power dissipation and enhances overall efficiency.
  • Reduced Heat Dissipation: Lower power losses translate to reduced heat generation.
  • Compact Design: Small footprint enables integration into space-constrained applications.
  • Simplified Circuit Design: Logic-level gate drive simplifies the driver circuitry.
  • Enhanced System Reliability: Robust construction ensures long-term performance.

Additional Details:

The AO8802 P-channel MOSFET is characterized by its low on-resistance, which minimizes voltage drop and power dissipation when the transistor is conducting. Its fast switching speed allows for efficient operation in high-frequency switching circuits. The low gate charge reduces the amount of current required to turn the transistor on and off, further improving efficiency. It typically comes in a small surface-mount package, allowing for compact circuit designs. Designers should consult the datasheet for detailed electrical characteristics, such as RDS(on), gate charge, and voltage ratings, to ensure proper circuit design and performance. The MOSFET's thermal performance should also be considered to ensure reliable operation at the intended operating conditions.

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