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AO6415L

Part No AO6415L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog FETs - Single
Description P-Channel Enhancement Mode Field Effect Transistor | MOSFET P-CH 20V 6TSOP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 3.3A
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Maximum) at Id, Vgs 75mOhm at 3.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 1.4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 6nC at 4.5V
Gate Source Voltage (Maximum) ±12V
Input Capacitance (Ciss) (Maximum) at Vds 620pF at 10V
Power Dissipation (Maximum) 1.25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 6-TSOP
Manufacturer Package SC-74, SOT-457
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 1144834-AO6415L
Manufacturer Homepage www.aosmd.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AO6415L CAD Model

Description

The Alpha & Omega Semiconductor Inc. AO6415L is a P-Channel MOSFET transistor designed for use in discrete semiconductor products. It features a drain-source breakdown voltage of 20V and a continuous drain current of 3.3A.

  • The transistor has a maximum Rds On of 75mOhm @ 3.3A and 10V.
  • The gate-source voltage threshold is 1.4V @ 250μA, and the maximum gate charge is 6nC @ 4.5V.
  • The AO6415L has an input capacitance of 620pF @ 10V and a power dissipation of 1.25W, making it ideal for use in portable devices, medical equipment, and industrial applications.
  • The transistor is packaged in a 6-TSOP and has a supply and demand status of balance.

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