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AM28F010-150JI

Part No AM28F010-150JI
Manufacturer Advanced Micro Devices
Catalog Hard To Find
Description 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
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Manufacturer Advanced Micro Devices
Win Source Part Number 1143587-AM28F010-150JI
Manufacturer Homepage www.amd.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AM28F010-150JI CAD Model

Description

The AM28F010-150JI is a 1 Mbit (128K x 8) CMOS Flash Memory manufactured by Advanced Micro Devices (AMD). This Flash memory is designed for non-volatile storage and in-system reprogrammability.

Applications

  • Embedded systems: Stores firmware, boot code, and configuration data in embedded applications.
  • Industrial control systems: Used for storing control programs and data logging.
  • Instrumentation: Stores calibration parameters and instrument settings.
  • Telecommunications equipment: Stores configuration data and software updates.
  • Networking devices: Used in routers, switches, and other network devices for storing boot code and configuration files.

Features

  • 1 Mbit (128K x 8) Memory Organization: Provides 1,048,576 bits of storage, organized as 131,072 bytes.
  • Flash Memory Technology: Electrically erasable and programmable, allowing for in-system reprogramming.
  • Single +5V Power Supply: Operates on a single 5-volt power supply.
  • Fast Access Time: 150ns access time for quick data retrieval.
  • TTL Compatible Inputs/Outputs: Interfaces easily with TTL logic circuits.

Benefits

  • Non-Volatile Storage: Retains data even when power is removed.
  • In-System Reprogrammability: Allows for reprogramming without removing the device from the circuit.
  • Easy to Use: Simple interface and programming requirements.
  • Fast Data Access: Provides quick access to stored data.
  • Wide Operating Temperature Range: Suitable for use in various environments.

Additional Details

The AM28F010-150JI is typically packaged in a JEDEC standard PLCC (Plastic Leaded Chip Carrier). It uses a command sequence to initiate erase and program operations. This flash memory is ideal for applications requiring frequent updates or modifications to stored data. The 150ns access time refers to the maximum time required for the data to become available after the address is applied. The device supports sector erase, allowing individual sectors of the memory to be erased without affecting other sectors. Data retention is typically specified as 10 years or more. Endurance is specified in write/erase cycles. Further research is needed to specify the number of cycles guaranteed.

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