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X28C010DI-15

Part No X28C010DI-15
Manufacturer Xicor Inc.
Catalog Electronic Wholesale
Description 5 Volt, Byte Alterable E2PROM
Sample
Rohs State rohs
ECAD Module
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Manufacturer Xicor Inc.
Win Source Part Number 1280833-X28C010DI-15
Manufacturer Homepage www.xicor.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian X28C010DI-15 CAD Model

Description

The X28C010DI-15 is a 1 Megabit (128K x 8) CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory) manufactured by Xicor Inc. EEPROMs are non-volatile memory devices that can be electrically erased and reprogrammed, offering flexibility in applications requiring data storage that can be updated in-system.

Applications:

  • Firmware storage in embedded systems
  • Data logging
  • Parameter storage in industrial equipment
  • Calibration data storage
  • Configuration settings storage

Features:

  • 1 Megabit (128K x 8) memory organization
  • CMOS technology for low power consumption
  • Electrically erasable and programmable
  • Fast access time (150ns)
  • Self-timed write cycle
  • Automatic page write operation

Benefits:

  • Non-volatile data storage, retaining data even when power is off
  • In-system programmability, allowing for easy updates and modifications
  • Low power consumption, suitable for battery-powered applications
  • Fast access time for quick data retrieval
  • Simplified write operation with self-timed write cycle and automatic page write

Additional Details:

The X28C010DI-15 operates from a single 5V power supply. It has a fast access time of 150ns, enabling rapid data retrieval. The device features a self-timed write cycle, simplifying the write operation. The automatic page write operation allows for efficient writing of multiple bytes of data. The X28C010DI-15 is available in a DIP (Dual In-line Package). The data sheet provides detailed information about the device's electrical characteristics, timing parameters, and operating conditions. Proper decoupling capacitors should be used to ensure stable operation. The memory array is organized as 128K bytes of 8 bits each. Byte and page write modes are supported. The endurance is specified by a certain number of write cycles, typically 10,000 or more.

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