The SUR50N03-12P is an N-Channel MOSFET from Vishay, designed for efficient power switching applications. Featuring a low on-resistance and fast switching capabilities, this MOSFET minimizes power loss and improves overall system performance. The 'P' likely designates a specific package or feature variation.

Applications

• Synchronous Rectification
• DC-DC Converters
• Power Inverters
• Motor Control
• Battery Management Systems (BMS)

Features

• N-Channel MOSFET
• Low On-Resistance (RDS(on))
• Fast Switching Speed
• RoHS Compliant

Benefits

• Improved Efficiency: Low on-resistance reduces conduction losses, resulting in improved efficiency and reduced heat generation.
• Faster Switching: Facilitates higher frequency operation, enabling smaller and more cost-effective power supply designs.
• Reliable Operation: Provides stable performance under a range of operating conditions.
• Environmentally Compliant: RoHS compliance ensures the product is free from hazardous substances, supporting environmentally conscious designs.

Specifications

The SUR50N03-12P operates with a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 50A. Its typical on-resistance (RDS(on)) is 12 mΩ at a gate-source voltage (VGS) of 10V. The gate threshold voltage (VGS(th)) typically falls between 2-4V. The MOSFET is commonly packaged in a TO-252 (DPAK) or similar package to facilitate efficient heat dissipation. It can function effectively within a temperature range of -55°C to +175°C, ensuring reliable performance in different environments. The device is designed for surface mount technology (SMT) applications.