The SUP90N10-8m8P is an N-Channel Power MOSFET from Vishay Siliconix. This MOSFET is designed for high-efficiency power switching applications. It features low on-resistance and fast switching speed, making it suitable for use in DC-DC converters, motor drives, and power management circuits.

Applications

• Synchronous Rectification in AC/DC and DC/DC converters
• OR-ing and Hot Swap applications
• Motor control
• Power tools
• Battery Management Systems (BMS)
• High-side load switch

Features

• Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
• Fast Switching Speed: Reduces switching losses in high-frequency applications.
• TrenchFET® Power MOSFET Technology: Provides high power density and efficient operation.
• 100% Rg Tested: Ensures robust performance and reliability.
• Lead (Pb)-free and RoHS compliant: Environmentally friendly.
• Halogen-free: Meets stricter environmental standards.

Benefits

• Increased Efficiency: Low RDS(on) reduces power dissipation, leading to higher efficiency in power conversion systems.
• Reduced Heat Dissipation: Lower losses translate to less heat generation, simplifying thermal management.
• Improved System Performance: Fast switching speed enhances the overall performance of power electronic circuits.
• Enhanced Reliability: Robust design ensures stable and dependable operation.
• Environmentally Friendly: RoHS compliance and halogen-free construction minimize environmental impact.

Technical Specifications

Drain-Source Voltage (VDS): 100V

Gate-Source Voltage (VGS): ±20V

Continuous Drain Current (ID): 90A (at VGS = 10V)

Pulsed Drain Current (IDM): 360A

On-Resistance (RDS(on)): 8.8 mΩ (at VGS = 10V)

Gate Charge (Qg): 45 nC (at VGS = 10V)

Operating Temperature Range: -55°C to +175°C

Package: TO-220

The SUP90N10-8m8P MOSFET is a suitable choice for designers seeking a high-performance, efficient, and reliable switching device. Its low on-resistance and fast switching characteristics make it ideal for modern power electronics applications. Proper thermal management, including the use of heatsinks, is recommended to maximize the MOSFET's performance and lifespan.