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Same model may have multiple batches, images only for reference.
SUP85N03-3M6P-GE3 Vishay
Same model may have multiple batches, images only for reference.

SUP85N03-3M6P-GE3

Part No SUP85N03-3M6P-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 30-V (D-S) MOSFET
Datasheet
SUP85N03-3M6P-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 100nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3535pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3.1W (Ta), 78.1W (Tc)
Rds On (Maximum) @ Id, Vgs 3.6 mOhm @ 22A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1262588-SUP85N03-3M6P-GE3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUP85N03-3M6P-GE3 CAD Model

Description

The SUP85N03-3M6P-GE3 from Vishay is a N-channel MOSFET transistor.

  • Drain-Source Voltage: 30V
  • Gate-Source Voltage: ±20V
  • Maximum Power Dissipation: 3.1W (Ta), 78.1W (Tc)
  • Maximum Rds On: 3.6 mOhm @ 22A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 100nC @ 10V
  • Package: TO-220-3
  • Mounting: Through-hole
  • Series: TrenchFET
  • Applications: Discrete semiconductor products
  • Supply and Demand: Balanced

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