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Same model may have multiple batches, images only for reference.
SUP80090E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SUP80090E-GE3

Part No SUP80090E-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 150V 128A TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) at 25°C 128A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Maximum) at Id, Vgs 9.4mOhm at 30A, 10V
Vgs(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 95nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3425pF at 75V
Power Dissipation (Maximum) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812392-SUP80090E-GE3
Ultra Librarian 3D Model Ultra Librarian SUP80090E-GE3 CAD Model

Description

The Vishay Siliconix SUP80090E-GE3 is an N-channel MOSFET with a maximum drain to source voltage of 150V.

  • Power Dissipation: 375W
  • Gate Charge: 95nC @ 10V
  • Package: TO-220AB
  • Mounting: Through-hole
  • Status: Limited

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Quantity Unit Price Ext. Price
25+ $2.0297 $50.7425
61+ $1.6654 $101.5894
93+ $1.6133 $150.0369
129+ $1.5613 $201.4077
166+ $1.5093 $250.5438
222+ $1.3531 $300.3882
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