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SUP80090E-GE3 Real Image

Same model may have multiple batches, images only for reference.

SUP80090E-GE3 Real Image

Same model may have multiple batches, images only for reference.

SUP80090E-GE3

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SUP80090E-GE3
Manufacturer	Vishay
Catalog	FETs - Single
Description	MOSFET N-CH 150V 128A TO220AB
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Vishay Siliconix
Packaging	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) at 25°C	128A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Maximum) at Id, Vgs	9.4mOhm at 30A, 10V
Vgs(th) (Maximum) at Id	5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	95nC at 10V
Maximum Vgs	±20V
Input Capacitance (Ciss) (Maximum) at Vds	3425pF at 75V
Power Dissipation (Maximum)	375W (Tc)
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	Through Hole
Supplier Device Package	TO-220AB
Manufacturer Package	TO-220-3
Manufacturer Pack Quantity	500
MSL Level	1 (Unlimited)
Popularity	Low
Supply and Demand Status	Limited
Win Source Part Number	812392-SUP80090E-GE3
Ultra Librarian 3D Model	Ultra Librarian SUP80090E-GE3 CAD Model

Alternative Products

Description

The Vishay Siliconix SUP80090E-GE3 is an N-channel MOSFET with a maximum drain to source voltage of 150V.

Power Dissipation: 375W
Gate Charge: 95nC @ 10V
Package: TO-220AB
Mounting: Through-hole
Status: Limited

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Quantity	Unit Price	Ext. Price
25+	$2.0297	$50.7425
61+	$1.6654	$101.5894
93+	$1.6133	$150.0369
129+	$1.5613	$201.4077
166+	$1.5093	$250.5438
222+	$1.3531	$300.3882

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