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SUM75N04-05L-E3

Part No SUM75N04-05L-E3
Manufacturer Vishay
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Manufacturer Vishay
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 839205-SUM75N04-05L-E3
Ultra Librarian 3D Model Ultra Librarian SUM75N04-05L-E3 CAD Model

Description

The SUM75N04-05L-E3 is an N-Channel MOSFET from Vishay, designed for efficient power switching applications. This power MOSFET features a very low on-resistance and logic-level gate drive, contributing to reduced power losses and enabling direct interfacing with microcontrollers and other low-voltage control circuits. The '-E3' suffix indicates compliance with RoHS standards, meaning it's lead-free and environmentally friendly.

Applications

  • Synchronous rectification in AC-DC and DC-DC converters
  • Motor control applications
  • Battery management systems (BMS)
  • Load switching in automotive applications
  • Power inverters for portable devices

Features

  • N-Channel MOSFET
  • Logic-level gate drive
  • Very low on-resistance (RDS(on))
  • Fast switching speed
  • RoHS compliant (-E3 suffix)
  • AEC-Q101 qualified (likely, given automotive applications)

Benefits

  • Direct Microcontroller Interface: Logic-level gate drive simplifies design and reduces component count by allowing direct interfacing with microcontrollers and other low-voltage control circuits.
  • High Efficiency: Very low on-resistance minimizes conduction losses, leading to higher efficiency, reduced heat generation, and longer battery life in portable applications.
  • Faster Switching: Enables operation at higher frequencies, resulting in smaller and more cost-effective power supply designs.
  • Automotive Grade Reliability: AEC-Q101 qualification (likely) ensures reliable performance in demanding automotive environments.
  • Environmentally Friendly: RoHS compliance ensures that the product is lead-free and meets environmental regulations.

Specifications

The SUM75N04-05L-E3 features a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 75A. Its typical on-resistance (RDS(on)) is very low, around 5 mΩ at a gate-source voltage (VGS) of 10V, and even lower at lower VGS voltages relevant for the logic level gate drive. The gate threshold voltage (VGS(th)) is typically low, around 1-2V. This MOSFET is typically packaged in a TO-252 (DPAK) or similar package for efficient heat dissipation. Its operating junction temperature ranges from -55°C to +175°C, ensuring reliable performance in a wide range of operating conditions. The device is designed for surface mounting onto a PCB.

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