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SUD50N10-18P-T4-E3

Part No SUD50N10-18P-T4-E3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 100V 8.2A TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Vishay-Siliconix
Series TrenchFET
Packaging Reel(TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 8.2A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs 18.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Gate Charge (Qg) @ Vgs 75nC @ 10V
Input Capacitance (Ciss) @ Vds 2600pF @ 50V
Power - Max 3W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style SMD/SMT
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Device Package TO-252, (D-Pak)
Win Source Part Number 194951-SUD50N10-18P-T4-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUD50N10-18P-T4-E3 CAD Model

Description

The Vishay-Siliconix TrenchFET is a N-channel MOSFET transistor used in discrete semiconductor products.

  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Manufacturer Device Package: TO-252, (D-Pak)
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 8.2A (Ta), 50A (Tc)
  • Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Gate Charge (Qg) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 2600pF @ 50V
  • Power - Max: 3W
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.2331 $59.2634
34+ $3.4731 $118.0854
52+ $3.3645 $174.9540
71+ $3.2559 $231.1689
92+ $3.1474 $289.5608
123+ $2.8217 $347.0691
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,490 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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