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Manufacturer Vishay Siliconix
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 56.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Maximum) at Id, Vgs 6.1mOhm at 30A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 81nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3300pF at 50V
Power Dissipation (Maximum) 39W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220 Full Pack
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 811471-SUA70060E-E3
Ultra Librarian 3D Model Ultra Librarian SUA70060E-E3 CAD Model

Description

The Vishay Siliconix MOSFET is a high-performance electronic component from Vishay Siliconix.

  • Drain to Source Voltage: 100V
  • Continuous Drain Current: 56.6A (Tc)
  • Maximum Rds On: 6.1mOhm @ 30A, 10V
  • Gate Charge: 81nC @ 10V
  • Input Capacitance: 3300pF @ 50V
  • Operating Temperature: -55°C to 150°C
  • Package Type: TO-220 Full Pack
  • Format: Tube

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