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Same model may have multiple batches, images only for reference.
SQJ850EP-T2_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJ850EP-T2_GE3

Part No SQJ850EP-T2_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL 60-V (D-S) 175C MOSFET / N-Channel 60 V 24A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
SQJ850EP-T2_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1225 pF @ 30 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SQJ850EP-T2_GE3TR,742-SQJ850EP-T2_GE3CT,742-SQJ850EP-T2_GE3DKR
Standard Package 3,000
Win Source Part Number 963542-SQJ850EP-T2_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ850EP-T2_GE3 CAD Model

Description

The Vishay Siliconix SQJ850EP-T2_GE3 is a MOSFET transistor with N-channel FET type.

  • Drain to Source Voltage (Vdss): 60 V
  • Continuous Drain Current (Id): 24A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Maximum Power Dissipation: 45W (Tc)
  • Package: PowerPAK® SO-8
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V
  • Vgs (Max): ±20V
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • Popularity: Low

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