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SIZ998DT-T1-GE3

Part No SIZ998DT-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2 N-CH 30V 8-POWERPAIR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Reel
Transistor Polarity 2 N-Channel (Dual), Schottky
FET Feature Standard
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 20A, 60A
Rds On (Maximum) at Id, Vgs 6.7mOhm at 15A, 10V, 2.8mOhm at 19A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.1nC at 4.5V, 19.8nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 930pF at 15V, 2620pF at 15V
Maximum Power 20.2W, 32.9W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-PowerWDFN
Supplier Device Package 8-PowerPair
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 734397-SIZ998DT-T1-GE3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIZ998DT-T1-GE3 CAD Model

Description

The SiZ998DT-T1-GE3 electronic component is a dual N-channel MOSFET manufactured by Vishay Siliconix.

  • Maximum Power: 20.2W
  • Maximum Continuous Drain Current: 20A
  • Gate-Source Voltage: 2.2V @ 250μA
  • Gate Charge: 8.1nC @ 4.5V
  • Application: power management, DC-DC converters, and motor control
  • Popularity: Low
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9433 $51.8815
115+ $0.8836 $101.6140
180+ $0.8538 $153.6840
255+ $0.7941 $202.4955
330+ $0.7642 $252.1860
410+ $0.7344 $301.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,121 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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