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Same model may have multiple batches, images only for reference.
SISH112DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SISH112DN-T1-GE3

Part No SISH112DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11.3A PPAK / N-Channel 30 V 11.3A (Tc) 1.5W (Tc) Surface Mount PowerPAK® 1212-8SH
Datasheet
SISH112DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 2610 pF @ 15 V
Power Dissipation (Max) 1.5W (Tc)
Temperature Range - Operating -50°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
Base Product Number SISH112
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SISH112DN-T1-GE3-ND,SISH112DN-T1-GE3CT,SISH112DN-T1-GE3TR,SISH112DN-T1-GE3DKR
Standard Package 3,000
Win Source Part Number 1093130-SISH112DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISH112DN-T1-GE3 CAD Model

Description

The Vishay 1093130-SISH112DN-T1-GE3 is a high-quality N-Channel MOSFET designed for use in a wide range of electronic circuits. 1093130-SISH112DN-T1-GE3 is manufactured by Vishay.

  • Channel Type: N-Channel
  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 11.3A
  • Package: PowerPAK 1212-8SH
  • Mounting Style: SMD (SMT)

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225+ $0.7866 $176.9850
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530+ $0.6597 $349.6410
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