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SIS903DN-T1-GE3

Part No SIS903DN-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET DUAL P-CHAN POWERPAK 1212 / Mosfet Array 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay Siliconix
Series TrenchFET® Gen III
Package Tape & Reel
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Rds On (Max) @ Id, Vgs 20.1mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2565pF @ 10V
Power - Max 2.6W (Ta) , 23W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Supplier Device Package PowerPAK® 1212-8 Dual
Base Product Number SIS903
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1337034-SIS903DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIS903DN-T1-GE3 CAD Model

Description

The Vishay Siliconix TrenchFET® Gen III series part number 1337034-SIS903DN-T1-GE3 is a MOSFET (Metal Oxide) FET, MOSFET array.

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET® Gen III
  • Configuration: Dual P-Channel
  • Drain-to-Source Voltage: 20V
  • Power (Max): 2.6W (Ta), 23W (Tc)
  • Gate Charge: 42nC @ 10V
  • Input Capacitance: 2565pF @ 10V
  • Current: 6A (Tc)
  • Rds On (Max): 20.1mOhm @ 5A, 4.5V
  • Vgs(th) (Max): 1V @ 250µA
  • Packaging: Tape and Reel
  • Package Size: PowerPAK® 1212-8 Dual
  • ECCN: EAR99
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5452 $54.0820
80+ $1.2678 $101.4240
125+ $1.2282 $153.5250
170+ $1.1886 $202.0620
220+ $1.1490 $252.7800
295+ $1.0301 $303.8795
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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