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SIR464DP-T1-E3

Part No SIR464DP-T1-E3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 190234-SIR464DP-T1-E3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIR464DP-T1-E3 CAD Model

Description

The SIR464DP-T1-E3 is a Power MOSFET from Vishay Siliconix, optimized for efficient power switching in various applications. It's an N-channel device, utilizing Vishay's advanced TrenchFET® technology. This MOSFET comes in a PowerPAK® SO-8 package, which provides excellent thermal performance and a small footprint.

Applications:

  • Synchronous Rectification in DC-DC converters
  • Load Switching
  • Power Management in portable devices (e.g., laptops, smartphones)
  • Adaptor and Battery Charger circuits
  • Motor Control applications

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses, resulting in higher efficiency.
  • Fast Switching Speed: Reduces switching losses at higher frequencies, improving overall performance.
  • Logic-Level Gate Drive: Allows the MOSFET to be directly driven by logic circuits such as microcontrollers.
  • TrenchFET® Technology: Enables high cell density for ultra-low on-resistance.
  • PowerPAK® SO-8 Package: Offers excellent thermal performance and a compact footprint.
  • RoHS Compliant: Complies with Restriction of Hazardous Substances directive.

Benefits:

  • Increased System Efficiency: Low RDS(on) and fast switching minimize power dissipation.
  • Reduced Board Space: The small PowerPAK SO-8 package allows for high-density designs.
  • Simplified Design: Logic-level gate drive simplifies the gate drive circuitry.
  • Improved Thermal Performance: The PowerPAK SO-8 package efficiently dissipates heat, enhancing reliability.
  • Environmentally Friendly: RoHS compliant, reducing environmental impact.

Additional Details:

The SIR464DP-T1-E3 has a drain-source voltage (VDS) rating of 30V. Its continuous drain current (ID) rating depends on the operating temperature and mounting conditions but typically falls in the range of 10-15A. The gate threshold voltage (VGS(th)) is designed for logic-level compatibility. This MOSFET is designed to operate over a temperature range of -55°C to +150°C. Its low on-resistance characteristics are particularly beneficial in battery-powered applications where efficiency is critical. The device's fast switching characteristics also make it suitable for high-frequency DC-DC converters. The PowerPAK SO-8 package is designed for surface mounting and automated assembly, contributing to lower manufacturing costs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5509 $57.8445
260+ $0.4516 $117.4160
400+ $0.4377 $175.0800
545+ $0.4239 $231.0255
705+ $0.4100 $289.0500
945+ $0.3673 $347.0985
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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