The SIHP6N40D-GE3 is an N-channel MOSFET transistor manufactured by Vishay Siliconix.

• Win Source Part Number: 756574-SIHP6N40D-GE3
• Packaging: Tube
• Mounting: Through Hole
• Transistor Polarity: N-Channel
• Product Type: Discrete Semiconductor
• Supplier Device Package: TO-220AB
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Operating Temperature: -55°C ~ 150°C
• Manufacturer Package: TO-220-3
• Power Dissipation (Maximum): 104W
• Vds - Drain-Source Breakdown Voltage: 400V
• Id - Continuous Drain Current: 6A
• Rds On (Maximum) @ Id, Vgs: 1Ohm @ 3A, 10V
• Gate Source Voltage(th) (Maximum) @ Id: 5V @ 250μA
• Gate Charge (Qg) (Maximum) @ Vgs: 18nC @ 10V
• Gate Source Voltage (Maximum): ±30V
• Input Capacitance (Ciss) (Maximum) @ Vds: 311pF @ 100V