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SIHP22N60E-GE3

Part No SIHP22N60E-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 600V 21A TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 180mOhm at 11A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 86nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1920pF at 100V
Power Dissipation (Maximum) 227W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803693-SIHP22N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP22N60E-GE3 CAD Model

Description

The Vishay Siliconix SIHP22N60E-GE3 is an N-channel MOSFET with a drain to source voltage (Vdss) of 600V.

  • Power Dissipation (Maximum): 227W (Tc)
  • Gate Charge (Qg) (maximum) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 1920pF @ 100V
  • Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Maximum Vgs: ±30V
  • Rds On (Maximum) @ Id, Vgs: 180mOhm @ 11A, 10V
  • Gate Threshold Voltage (Vgs(th)) (Maximum) @ Id: 4V @ 250μA
  • Supply and Demand Status: Balance
  • Package: TO-220-3
  • Mounting: Through hole
  • OEM Part: Yes
  • Manufacturer Pack Quantity: 1,000
  • MSL Level: 1 (Unlimited)
  • Operating Temperature: -55°C ~ 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3338 $60.0084
43+ $2.7354 $117.6222
66+ $2.6500 $174.9000
91+ $2.5645 $233.3695
117+ $2.4790 $290.0430
156+ $2.2226 $346.7256
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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