The Vishay Siliconix MOSFET is a discrete semiconductor product with an N-channel transistor polarity and a TO-247AC supplier device package.

• Vds - Drain-Source Breakdown Voltage: 600V
• Id - Continuous Drain Current: 47A
• Rds On (Maximum) @ Id, Vgs: 67mOhm @ 24A, 10V
• Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
• Gate Charge (Qg) (Maximum) @ Vgs: 225nC @ 10V
• Input Capacitance (Ciss) (Maximum) @ Vds: 4854pF @ 100V
• Power Dissipation (Maximum): 379W
• Operating Temperature: -55°C to 150°C
• Supply and demand status: limited.